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This paper describes the deposition and characterization of Ce-modified HfO2 thin films. Layers were deposited on Si(100) substrates by thermal atomic layer deposition using (MeCp)(2)Hf(OMe)(Me), Ce(mmp)(4), and H2O as the precursors. Spectroscopic ellipsometry and medium energy ion scattering were used to measure the thicknesses and compositions of the deposited films. After postdeposition annealing, a metastable cubic phase is found to be stabilized in the films. Capacitance-voltage measurements have been used to characterize the dielectric properties of deposited films before and after two annealing regimes. The equivalent oxide thickness of an as-deposited sample with nominal high-kappa dielectric thickness of 6 nm is circa 2.8 nm from which the dielectric constant 31 was calculated. The leakage current density is in order of 10(-6) A/cm(2) at +/- 1V. The fabrication of Ce-HfO2 films without plasma or O-3-based atomic layer deposition represents a potentially useful manufacturing route for future scaled devices. (C) 2014 American Vacuum Society.
Author(s): King PJ, Sedghi N, Hall S, Mitrovic IZ, Chalker PR, Werner M, Hindley S
Publication type: Article
Publication status: Published
Journal: Journal of Vacuum Science & Technology B
Year: 2014
Volume: 32
Issue: 3
Pages: 03D103-1-03D103-5
Print publication date: 01/05/2014
ISSN (print): 1071-1023
ISSN (electronic): 2166-2754
Publisher: American Institute of Physics
URL: http://dx.doi.org/10.1116/1.4826174
DOI: 10.1116/1.4826174
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