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Lookup NU author(s): Dr Billy Murdoch
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© 2017 IOP Publishing Ltd. Thin film zinc tin oxide (ZTO) has been energetically deposited at 100 °C using high power impulse magnetron sputtering (HiPIMS). Reactive co-deposition from Zn (HiPIMS mode) and Sn (DC magnetron sputtering mode) targets yielded a gradient in the Zn:Sn ratio across a 4-inch diameter sapphire substrate. The electrical and optical properties of the film were studied as a function of composition. As-deposited, the films were amorphous, transparent and semi-insulating. Hydrogen was introduced by post-deposition annealing (1 h, 500 °C, 100 mTorr H2) and resulted in significantly increased conductivity with no measurable structural alterations. After annealing, Hall effect measurements revealed n-type carrier concentrations of ∼1 ×1017 cm-3 and mobilities of up to 13 cm2 V-1 s-1. These characteristics are suitable for device applications and proved stable. X-ray photoelectron spectroscopy was used to explore the valence band structure and to show that downward surface band-bending resulted from OH attachment. The results suggest that HiPIMS can produce dense, high quality amorphous ZTO suitable for applications including transparent thin film transistors.
Author(s): Tran HN, Mayes ELH, Murdoch BJ, McCulloch DG, McKenzie DR, Bilek MMM, Holland AS, Partridge JG
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Year: 2017
Volume: 32
Issue: 4
Print publication date: 01/04/2017
Online publication date: 15/02/2017
Acceptance date: 15/02/2017
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing
URL: https://doi.org/10.1088/1361-6641/aa60ae
DOI: 10.1088/1361-6641/aa60ae
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