Photon emission analysis of defect-free 4H-SiC p-n diodes in the avalanche regime

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Author(s): Vassilevski K; Banc C; Bano E; Ouisse T; Zekentes K

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Materials Science Forum: Silicon Carbide and Related Materials 2001

Year of Conference: 2002

Pages: 1293

ISSN: 0255-5476

Publisher: Trans Tech Publications Ltd.

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.389-393.1293

DOI: 10.4028/www.scientific.net/MSF.389-393.1293

Library holdings: Search Newcastle University Library for this item

ISBN: 9780878498949

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