Ferroelectrics for nanoelectronics

  1. Lookup NU author(s)
  2. Dr Nilhil Ponon
  3. Dan Appleby
  4. Dr Kelvin Kwa
  5. Professor Anthony O'Neill
Author(s)Ponon N, Appleby D, Mojarad SA, Kwa K, O'Neill A
Publication type Conference Proceedings (inc. Abstract)
Conference NameIntel ERIC
Conference LocationDublin, Ireland
Year of Conference2012
Source Publication Date
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The material properties of thin film polycrystalline Barium titanate (BTO) and Titanium nitride (TiN) are being investigated for use in back-end-of-line (BEOL) and transistor gate stacks. The BTO was deposited by pulsed laser deposition (PLD) and rf-magnetron sputtering with TiN reactively sputtered for top electrodes. Results shows that TiN deposited at room temperature have reasonable quality and show a sheet resistivity of 219 µΩcm. The phase of polycrystalline BTO with grain size around 100 nm is found to be a mixture of cubic and tetragonal, resulting in changes to the expected ferroelectric properties of the thin film. BTO is also found to absorb CO2 ­ from the atmosphere forming a non ferroelectric thin layer of BaCO­3.