(Invited) Negative Capacitance Using Ferroelectrics for Future Steep-Slope MOSFETS

  1. Lookup NU author(s)
  2. Professor Anthony O'Neill
Author(s)O'Neill AG
Publication type Article
JournalECS Transactions
Year2015
Volume69
Issue10
Pages171-177
ISSN (print)1938-5862
ISSN (electronic)1938-6737
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
Effective negative capacitance has been postulated in ferroelectrics because there is hysteresis in plots of polarization-electric field. In future integrated circuits, the incorporation of negative capacitance into MOSFET gate stacks would reduce the sub-threshold slope, enabling low power operation and reduced self-heating. As a step towards meeting this challenge, effective negative capacitance is demonstrated at room temperature in metal-insulator-metal capacitors, where it is stabilized by the presence of a paraelectric material.
PublisherElectrochemical Society, Inc.
URLhttp://dx.doi.org/10.1149/06910.0171ecst
DOI10.1149/06910.0171ecst
Actions    Link to this publication

Altmetrics provided by Altmetric

Share