Toggle Main Menu Toggle Search

Open Access padlockePrints

(Invited) Negative Capacitance Using Ferroelectrics for Future Steep-Slope MOSFETS

Lookup NU author(s): Professor Anthony O'Neill

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


Abstract

Effective negative capacitance has been postulated in ferroelectrics because there is hysteresis in plots of polarization-electric field. In future integrated circuits, the incorporation of negative capacitance into MOSFET gate stacks would reduce the sub-threshold slope, enabling low power operation and reduced self-heating. As a step towards meeting this challenge, effective negative capacitance is demonstrated at room temperature in metal-insulator-metal capacitors, where it is stabilized by the presence of a paraelectric material.


Publication metadata

Author(s): O'Neill AG

Publication type: Article

Publication status: Published

Journal: ECS Transactions

Year: 2015

Volume: 69

Issue: 10

Pages: 171-177

Print publication date: 14/09/2015

Online publication date: 14/09/2015

Acceptance date: 14/09/2015

ISSN (print): 1938-5862

ISSN (electronic): 1938-6737

Publisher: Electrochemical Society, Inc.

URL: http://dx.doi.org/10.1149/06910.0171ecst

DOI: 10.1149/06910.0171ecst


Altmetrics

Altmetrics provided by Altmetric


Share