FEGTEM analysis of the effects of Ge segregation and germane flux on the Ge profile across nm-scale SiGe layers, grown by both MBE and CVD

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Author(s): Benedetti A, Norris DJ, Hetherington CJD, Cullis AG, Robbins DJ, Wallis DJ

Editor(s): Cullis, A.G., Midgley, P.A.

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Microscopy of Semiconducting Materials Conference

Year of Conference: 2004

Pages: 151-154

Publisher: Institute of Physics Publishing

Library holdings: Search Newcastle University Library for this item

Series Title: Institute of Physics Conference Series

ISBN: 9780750309790

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