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Molecular rectification with M vertical bar(D-sigma-A LB film)vertical bar M junctions

Lookup NU author(s): Professor Patrick Briddon

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Abstract

Molecular materials of the form electron donor-sigma-bridge-electron acceptor (D-sigma-A) have been synthesized and incorporated into non-centrosymmetric Langmuir-Blodgett (LB) multilayer structures. Electrical characterization has been performed using a metalmetal (MM) junction construction. Current density-voltage data demonstrate striking rectification behaviour. Computational modelling of the electronic structure of the material has been carried out using a first principles, density functional approach. Possible conduction mechanisms are discussed with reference to the results of this modelling.

Publication metadata

Author(s): Brady AC, Hodder B, Martin AS, Sambles JR, Ewels CP, Jones R, Briddon PR, Musa AM, Panetta CAF, Mattern DL

Publication type: Article

Publication status: Published

Journal: Journal of Materials Chemistry

Year: 1999

Volume: 9

Issue: 9

Pages: 2271-2275

Print publication date: 01/09/1999

ISSN (print): 0959-9428

ISSN (electronic): 1364-5501

Publisher: Royal Society of Chemistry

URL: http://dx.doi.org/10.1039/a902107h

DOI: 10.1039/a902107h

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