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Lookup NU author(s): Dominique Morrison,
Dr Christopher Johnson
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In devices such as recess gate MESFETs and in SITs, the Schottky gate is formed on a plasma etched surface. The quality of this interface is crucial to the performance of these devices. This study considers sacrificial oxidation asa post-etch, pre-metallisation treatment for SiC Schottky diodes. Current-voltage and X-ray Photoelectron Spectroscopy measurements are used to determine the effect of two different sacrificial oxidation methods on plasma etched and unetched n-type 4H-SiC.
Author(s): Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM
Publication type: Article
Publication status: Published
Journal: Materials Science Forum: Silicon Carbide and Related Materials 2000
Print publication date: 01/01/2000
ISSN (print): 0255-5476
Publisher: Trans Tech Publications
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