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Effect of plasma etching and sacrificial oxidation on 4H-SiC Schottky barrier diodes

Lookup NU author(s): Dominique Morrison, Dr Christopher Johnson

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Abstract

In devices such as recess gate MESFETs and in SITs, the Schottky gate is formed on a plasma etched surface. The quality of this interface is crucial to the performance of these devices. This study considers sacrificial oxidation asa post-etch, pre-metallisation treatment for SiC Schottky diodes. Current-voltage and X-ray Photoelectron Spectroscopy measurements are used to determine the effect of two different sacrificial oxidation methods on plasma etched and unetched n-type 4H-SiC.

Publication metadata

Author(s): Morrison DJ, Pidduck AJ, Moore V, Wilding PJ, Hilton KP, Uren MJ, Johnson CM

Publication type: Article

Publication status: Published

Journal: Materials Science Forum: Silicon Carbide and Related Materials 2000

Year: 2000

Volume: 338-3

Pages: 1199-1202

Print publication date: 01/01/2000

ISSN (print): 0255-5476

ISSN (electronic):

Publisher: Trans Tech Publications

URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.338-342.1199

DOI: 10.4028/www.scientific.net/MSF.338-342.1199

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