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Dopant mapping and strain analysis in B doped silicon structures using micro-Raman spectroscopy

Lookup NU author(s): Dr John Hedley, Emeritus Professor James Burdess, Dr Alun Harris


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Raman microscopy, using a novel line focus configuration, has been used here to study boron concentration distributions and depth profiles in silicon for two different sources of dopant. Changes in the Raman phonon peak frequency for boron doped silicon have been calibrated against concentration by comparison with SIMS data and a relationship between Raman shift and lattice strain has been obtained.

Publication metadata

Author(s): Bowden M, Gardiner DJ, Lourenco MA, Hedley J, Wood D, Burdess JS, Harris AJ

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 1998 MRS Spring Symposium

Year of Conference: 1998

Pages: 239-244

ISSN: 0272-9172

Publisher: Materials Research Society

Notes: Conference code: 48894 Cited By (since 1996): 2 Export Date: 1 September 2009 Source: Scopus CODEN: MRSPD Language of Original Document: English Correspondence Address: Bowden, M.; Univ of Northumbria at Newcastle, Newcastle upon Tyne, United Kingdom Sponsors: MRS