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p-type doping of graphene with F4-TCNQ

Lookup NU author(s): Professor Jon Goss, Professor Patrick Briddon

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Abstract

We use local density function theory to study the electronic properties of tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) deposited on a graphene surface. We show that charge transfer of 0.3 holes/molecule between graphene and F4-TCNQ occurs, which makes graphene p-type doped. These results are in agreement with experimental findings on F4-TCNQ.

Publication metadata

Author(s): Pinto H, Jones R, Goss JP, Briddon PR

Publication type: Article

Publication status: Published

Journal: Journal of Physics: Condensed Matter

Year: 2009

Volume: 21

Issue: 40

ISSN (print): 0953-8984

ISSN (electronic): 1361-648X

Publisher: Institute of Physics Publishing Ltd.

URL: http://dx.doi.org/10.1088/0953-8984/21/40/402001

DOI: 10.1088/0953-8984/21/40/402001

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