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Lookup NU author(s): Irina Nikitina,
Dr Konstantin VasilevskiyORCiD,
Dr Alton Horsfall,
Professor Nick Wright,
Professor Anthony O'Neill,
Dr Christopher Johnson
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4H-SiC Schottky diodes with nickel silicide contacts were formed by consecutive deposition of a titanium adhesion layer, 4 nm thick, and nickel, 100 nm thick, followed by annealing at temperatures between 600 and 750 degrees C. It was found that contacts with barrier heights of 1.45 eV which consist mainly of single nickel monosilicide (NiSi) phase were formed in the 600-660 degrees C temperature range, while annealing at around 750 degrees C led to the formation of Ni2Si Schottky contacts with barrier heights of 1.1 eV. Annealing at intermediate temperatures resulted in the nucleation of Ni2Si grains embedded in the NiSi film which were directly observed by micro-Raman mapping. It was shown that the thermodynamically unfavourable NiSi phase appeared in the 600-660 degrees C temperature range due to control of the Ni-SiC solid-state chemical reaction by nickel diffusion through the titanium diffusion barrier.
Author(s): Nikitina I, Vassilevski K, Horsfall A, Wright N, O'Neill AG, Ray SK, Zekentes K, Johnson CM
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd.
Notes: Article no. 055006
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