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Lookup NU author(s): KHALED Etmimi,
Professor Jon Goss,
Professor Patrick Briddon,
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Diamond has potential as a wide band-gap semiconductor with high intrinsic carrier mobility, thermal conductivity and hardness. Hydrogen is involved in electrically active defects in chemical vapour deposited diamond, and muonium, via muon spin spectroscopy, can provide useful characterization for the configurations adopted by H atoms in a crystalline material. We present the results of a computational investigation into the structure of the Mu(X) centre proposed to be associated with nitrogen aggregates. We find that the propensity of hydrogen or muonium to chemically react with the lattice makes the correlation of Mu(X) with nitrogen aggregates problematic, and suggest alternative structures.
Author(s): Etmimi KM, Goss JP, Briddon PR, Gsiea AM
Publication type: Article
Publication status: Published
Journal: Journal of Physics: Condensed Matter
ISSN (print): 0953-8984
ISSN (electronic): 1361-648X
Publisher: Institute of Physics Publishing Ltd.
Notes: Article no. 364211
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