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Lookup NU author(s): Professor Patrick Briddon
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The properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation was investigated using density functional calculations. It was observed that the boron traps an oxygen dimer to form a bistable defect with a donor level in the upper half of the band gap. It was also observed that the trap density increases with the oxygen concentration in both B-doped and Ga-doped material. It was shown that the formation of the defect from mobile oxygen dimer has a calculated activation energy of 0.3 eV.
Author(s): Adey J, Jones R, Palmer D, Briddon P, Öberg S
Publication type: Article
Publication status: Published
Journal: Physical Review Letters
ISSN (print): 0031-9007
ISSN (electronic): 1079-7114
Publisher: American Physical Society
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