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Degradation of boron-doped Czochralski-grown silicon solar cells

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The properties of the boron-oxygen center responsible for the degradation of Czochralski-grown Si(B) solar cells during operation was investigated using density functional calculations. It was observed that the boron traps an oxygen dimer to form a bistable defect with a donor level in the upper half of the band gap. It was also observed that the trap density increases with the oxygen concentration in both B-doped and Ga-doped material. It was shown that the formation of the defect from mobile oxygen dimer has a calculated activation energy of 0.3 eV.

Publication metadata

Author(s): Adey J, Jones R, Palmer D, Briddon P, Öberg S

Publication type: Article

Publication status: Published

Journal: Physical Review Letters

Year: 2004

Volume: 93

Issue: 5

Pages: 1-55504

ISSN (print): 0031-9007

ISSN (electronic): 1079-7114

Publisher: American Physical Society

URL: http://dx.doi.org/10.1103/PhysRevLett.93.055504

DOI: 10.1103/PhysRevLett.93.055504

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