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Intrinsic defects in CdTe and CdZnTe alloys

Lookup NU author(s): Professor Patrick Briddon

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Abstract

The Cd vacancy (VCd) and Te anti-site (TeCd) are two dominant defects in CdTe and CdZnTe alloys grown in Te-rich conditions. We examine the properties of these two intrinsic defects in Cd1 - x ZnxTe alloys with x < 0.5 using first-principles calculations. It is shown that Cd vacancies become progressively more favourable with increasing Zn content, in contrast with Te anti-sites, which show the opposite behaviour, explaining the trend towards p-type conductivity in Cd1 - x ZnxTe. © 2009 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Carvalho A, Tagantsev A, Oberg S, Briddon P, Setter N

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 25th International Conference on Defects in Semiconductors

Year of Conference: 2009

Pages: 5019-5021

ISSN: 0921-4526

Publisher: Physica B: Condensed Matter: Elsevier BV

URL: http://dx.doi.org/10.1016/j.physb.2009.08.251

DOI: 10.1016/j.physb.2009.08.251

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