ePrints

Intrinsic defect complexes in CdTe and ZnTe

Lookup NU author(s): Dr Alexandra Carvalho, Professor Patrick Briddon

Downloads

Full text for this publication is not currently held within this repository. Alternative links are provided below where available.

Abstract

Radiation defects in CdTe and ZnTe are modeled from first principles. The most important intrinsic defects resulting from cation evaporation or displacement are cation vacancies and tellurium anti-sites, electrically active defects characterized by a low formation energy. The reactions between those two defects are investigated. Since cation vacancy clusters of less than four vacancies are not stable, it is argued that cation vacancy aggregation is not a dominant process in near-equilibrium conditions. In-grown or radiation-induced clusters of four cation vacancies may serve as a nucleation center for tellurium precipitation. The formation energy of these small voids is lower in ZnTe than in CdTe. Additionally, cation-anion divacancies are stable in ZnTe and in p-type CdTe. (C) 2011 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Carvalho A, Oberg S, Briddon PR

Publication type: Article

Publication status: Published

Journal: Thin Solid Films

Year: 2011

Volume: 519

Issue: 21

Pages: 7468-7471

Print publication date: 22/12/2010

ISSN (print): 0040-6090

ISSN (electronic): 1879-2731

Publisher: Elsevier SA

URL: http://dx.doi.org/10.1016/j.tsf.2010.12.128

DOI: 10.1016/j.tsf.2010.12.128

Altmetrics

Share