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Formation of bismuth oxide nanowires by simultaneous templating and electrochemical adhesion of DNA on Si/SiO2

Lookup NU author(s): Ross Little, Dr Ben Horrocks, Professor Lidija Siller


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Deoxyribonucleic acid (DNA)-templated growth of Bi/Bi2O3 nanowires attached to the Si surface was obtained by electrochemical reduction of Bi(III) at an n-type Si electrode in aqueous Bi(NO3)(3)/HNO3 at pH 2.5 with calf thymus DNA. The nanowires had a mean diameter of 5 nm and a range of lengths from 1.4 mu m to 6.1 mu m. The composition and structure of the wires were determined by atomic force microscopy, Fourier transform infrared spectroscopy, Raman spectroscopy and X-ray photoemission spectroscopy. The dominant component of the material is Bi2O3 owing to the rapid re-oxidation of nanoscale Bi in the presence of air and water. Our method has the potential to construct complex architectures of Bi/Bi2O3 nanostrucures on high quality Si substrates. (C) 2012 Elsevier B.V. All rights reserved.

Publication metadata

Author(s): Hale MG, Little R, Salem MA, Hedley JH, Horrocks BR, Siller L

Publication type: Article

Publication status: Published

Journal: Thin Solid Films

Year: 2012

Volume: 520

Issue: 24

Pages: 7044-7048

Print publication date: 01/10/2012

ISSN (print): 0040-6090

ISSN (electronic): 1879-2731

Publisher: Elsevier SA


DOI: 10.1016/j.tsf.2012.07.083


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