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Lookup NU author(s): Dr Jose Coutinho, Dr Mark Rayson, Professor Patrick Briddon
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The trivacancy (V-3) in silicon has been recently shown to be a bistable center in the neutral charge state, with a fourfold-coordinated configuration, V-3[FFC], lower in energy than the (110) planar one [V. P. Markevich et al., Phys. Rev. B 80, 235207 (2009)]. Transformations of the V-3 defect between different configurations, its diffusion, and disappearance upon isochronal and isothermal annealing of electron-irradiated Si:O crystals are reported from joint deep level transient spectroscopy measurements and first-principles density-functional calculations. Activation energies and respective mechanisms for V-3 transformation from the (110) planar configuration to the fourfold-coordinated structure have been determined. The annealing studies demonstrate that V-3 is mobile in Si at T > 200 degrees C and in oxygen-rich material can be trapped by interstitial oxygen atoms so resulting in the appearance of V3O complexes. The calculations suggest that V-3 motion takes place via consecutive FFC/planar transformation steps. The activation energy for the long-range diffusion of the V-3 center has been derived and agrees with atomic motion barrier from the calculations.
Author(s): Coutinho J, Markevich VP, Peaker AR, Hamilton B, Lastovskii SB, Murin LI, Svensson BJ, Rayson MJ, Briddon PR
Publication type: Article
Publication status: Published
Journal: Physical Review B
Year: 2012
Volume: 86
Issue: 17
Print publication date: 01/11/2012
ISSN (print): 1098-0121
ISSN (electronic): 1550-235X
Publisher: American Physical Society
URL: http://dx.doi.org/10.1103/PhysRevB.86.174101
DOI: 10.1103/PhysRevB.86.174101
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