Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures

Martin, LC; Clark, D; Ramsay, EP; Murphy, AE; Thompson, RF; Smith, DA; Young, RAR; Cormack, JD; Wright, NG; Horsfall, AB

doi:10.4028/www.scientific.net/MSF.717-720.773

Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures

Lookup NU author(s): Lucy Martin, Professor Nick Wright, Dr Alton Horsfall

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Abstract

The recent development of Silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high-temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high-emperature circuitry.