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Lookup NU author(s): HK Chan,
Dr Jon Goss,
Professor Nick Wright,
Dr Alton Horsfall
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Two sets of 4H-SiC signal-lateral JFETs were thermally aged at 400 degrees C and 500 degrees C in furnaces open to air for 1000 hours. I-V and low frequency noise measurements were performed on these devices and the results were compared against the as-fabricated sample. The data from I-V characterisation demonstrates that the linear and saturated drain-source current decreases monotonically with stress temperature. In addition, the linear characteristics of the JFETs have shifted approximately 1.5V along the drain-source voltage axis. Whilst the devices thermally aged at 400 degrees C show no degradation in magnitude and behaviour in Noise Power Spectral Density (NPSD), the NPSD of 500 degrees C stressed devices has increase approximately 30dB and it shows a full frequency spectrum of 1/f dependency up to 100 kHz. A further investigation of the noise origin reveals that the Normalised Noise Power Spectral Density (NNPSD) of the aged sample is directly proportional to R-DS which is similar to the as-fabricated sample. Thus we hypothesize that the existing noise sources have intensified possibly due to the evolution of defects.
Author(s): Chan HK, Stevens RC, Goss JP, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 9th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2013
Online publication date: 01/01/2013
Publisher: Trans Tech Publications, Inc.
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum