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High Temperature Stability of Oxygen Functionalized Epitaxial Graphene/Metal Contact Interfaces

Lookup NU author(s): Dr Venkata Nagareddy, Professor Jon Goss, Professor Nick Wright, Dr Kurt Gaskill, Dr Alton Horsfall


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The electrical characteristics of oxygen functionalized epitaxial graphene and Ti/Au metal contact interfaces were systematically investigated as a function of temperature. As the temperature was increased from 300 K to 673 K, the contact resistance and the sheet resistance decreased by 75% and 33%, respectively. The resistance of oxygen functionalized graphene vs temperature exhibited Arrhenius type behavior with activation energy of 38 meV. The results showed no hysteresis effects in resistance measurements over the temperatures studied here, suggesting the contact interfaces remain stable at high temperatures.

Publication metadata

Author(s): Nagareddy VK, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 9th European Conference on Silicon Carbide and Related Materials

Year of Conference: 2013

Pages: 145-148

Online publication date: 01/01/2013

ISSN: 1662-9752

Publisher: Trans Tech Publications, Inc.


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Silicon Carbide and Related Materials 2012

ISBN: 9783037856246