Browse by author
Lookup NU author(s): Dr Venkata Nagareddy,
Professor Jon Goss,
Professor Nick Wright,
Dr Kurt Gaskill,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
The electrical characteristics of oxygen functionalized epitaxial graphene and Ti/Au metal contact interfaces were systematically investigated as a function of temperature. As the temperature was increased from 300 K to 673 K, the contact resistance and the sheet resistance decreased by 75% and 33%, respectively. The resistance of oxygen functionalized graphene vs temperature exhibited Arrhenius type behavior with activation energy of 38 meV. The results showed no hysteresis effects in resistance measurements over the temperatures studied here, suggesting the contact interfaces remain stable at high temperatures.
Author(s): Nagareddy VK, Hernandez SC, Wheeler VD, Nyakiti LO, Myers-Ward RL, Eddy CR, Goss JP, Wright NG, Walton SG, Gaskill DK, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 9th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2013
Online publication date: 01/01/2013
Publisher: Trans Tech Publications, Inc.
Library holdings: Search Newcastle University Library for this item
Series Title: Silicon Carbide and Related Materials 2012