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Lookup NU author(s): Benjamin Furnival,
Professor Nick Wright,
Dr Alton Horsfall
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In this work SiC-based MIS capacitors have been fabricated with different contact/high-x dielectric combinations and the temperature dependence of the characteristics have been examined in an N-2 ambient at temperatures between 323K and 673K. The structures utilise either a Pt or Pd catalytic gate contact and a TiO2 or HfO2 high-K dielectric, all of which are grown on a thin SiO2 layer, thermally grown on the Si face of a 4H SiC epitaxial layer. The MIS capacitors have been studied in an N-2 ambient between 323K and 673K and observations show that V-EB reduces with increasing temperature. The majority of this variation is caused a reduction in the D-it influencing the structures electrical characteristics, due to a shift in the semiconductors bulk potential, which is due to the lower V-TH of SiC-based MOSFETs at high temperatures.
Author(s): Furnival BJD, Roy SK, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 9th European Conference on Silicon Carbide and Related Materials
Year of Conference: 2013
Online publication date: 01/01/2013
Publisher: Trans Tech Publications, Inc.
Library holdings: Search Newcastle University Library for this item
Series Title: Silicon Carbide and Related Materials 2012