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SiC X-ray detectors for harsh environments

Lookup NU author(s): Dr Alton Horsfall


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We have characterised a number of SiC Schottky Diodes as soft X-ray photon counting detectors over the temperature range -30 degrees C to + 80 degrees C. We present the spectroscopic performance, as measured over the energy range similar to 6 keV-30 keV and correlate the data with measurements of the temperature dependence of the device leakage current. The results show that these detectors can be used for X-ray photon counting spectroscopy over a wide temperature range. Measurement of the radiation tolerance of Semi Transparent SiC Schottky Diodes (STSSD) has shown that these devices can still operate as photon counting X-ray spectrometers after proton irradiation (total dose of 10(13) cm(-2), 50 MeV). We present measurements on proton irradiated STSSDs that indicate that radiation induced traps, located in the upper half of the bandgap, have reduced the mobility and concentration of charge carriers. X-ray spectra predicted using a Monte Carlo model for SiC diodes are compared with measured spectra.

Publication metadata

Author(s): Lees JE, Barnett AM, Bassford DJ, Stevens RC, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Journal of Instrumentation

Year: 2011

Volume: 6

Print publication date: 11/01/2011

ISSN (electronic): 1748-0221

Publisher: Institute of Physics Publishing Ltd


DOI: 10.1088/1748-0221/6/01/C01032


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