Browse by author
Lookup NU author(s): Dr David Robbins
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
A novel fabrication technique for selectively modulation-doping strained-Si quantum wells on relaxed Si1−xGex substrates to produce field effect transistors and low dimensional devices is demonstrated using standard silicon processing techniques. Strain–relaxed Si1−xGex buffers were selectively ion implanted ex-situ through a lithographically patterned resist before being chemically cleaned and replaced in the growth chamber to regrow a quantum well and cap layers. Mobilities of up to 49,900 cm2 V−1 s−1 for a carrier density of 9.72×1011 cm−2 at 1.7 K for selectively doped Hall bars have been demonstrated along with wires using the technique.
Author(s): Robbins DJ; Paul DJ; Ahmed A; Churchill AC; Leong WY
Publication type: Article
Publication status: Published
Journal: Materials Science & Engineering B: Solid-State Materials for Advanced Technology
ISSN (electronic): 1873-4944
Publisher: Elsevier SA
Altmetrics provided by Altmetric