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Low-dimensional inverted Si/SiGe modulation-doped electron gases using selective ex-situ ion implantation

Lookup NU author(s): Dr David Robbins


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A novel fabrication technique for selectively modulation-doping strained-Si quantum wells on relaxed Si1−xGex substrates to produce field effect transistors and low dimensional devices is demonstrated using standard silicon processing techniques. Strain–relaxed Si1−xGex buffers were selectively ion implanted ex-situ through a lithographically patterned resist before being chemically cleaned and replaced in the growth chamber to regrow a quantum well and cap layers. Mobilities of up to 49,900 cm2 V−1 s−1 for a carrier density of 9.72×1011 cm−2 at 1.7 K for selectively doped Hall bars have been demonstrated along with wires using the technique.

Publication metadata

Author(s): Robbins DJ; Paul DJ; Ahmed A; Churchill AC; Leong WY

Publication type: Article

Publication status: Published

Journal: Materials Science & Engineering B: Solid-State Materials for Advanced Technology

Year: 2002

Volume: 89

Issue: 1-3

Pages: 111-115

ISSN (electronic): 1873-4944

Publisher: Elsevier SA


DOI: 10.1016/S0921-5107(01)00812-1


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