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3.3 kV PT-IGBT with voltage-sensor monolithically integrated

Lookup NU author(s): Dr Jesus Urresti IbanezORCiD

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Abstract

An intelligent insulated gate bipolar transistor (IGBT) suitable to be used in remote-controlled on-load tap changers and traction applications is analysed in this study. An anode voltage sensor monolithically integrated in the active area of a 3.3 kV-50 A PT-IGBT is introduced to enhance the robustness of the IGBT against short-circuit events. The operation mode of the anode voltage sensor is described and TCAD simulations are performed to describe the static and dynamic performance together with the interaction between the sensor and the IGBT core cells. The study of the anode voltage performance under inductive turn-off conditions is also included, comparing the behaviour of IGBTs with and without anode voltage sensor

Publication metadata

Author(s): Urresti J, Hidalgo S, Flores D, Hevia D

Publication type: Article

Publication status: Published

Journal: IET Circuits, Devices and Systems Series

Year: 2014

Volume: 8

Issue: 3

Pages: 182-187

Online publication date: 01/05/2014

Acceptance date: 12/02/2014

ISSN (print): 1751-858X

ISSN (electronic): 1751-8598

Publisher: IET

URL: http://dx.doi.org/10.1049/iet-cds.2013.0213

DOI: 10.1049/iet-cds.2013.0213

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