Toggle Main Menu Toggle Search

Open Access padlockePrints

Electro-thermal method for semiconductor power lossesanalysis under different modulation schemes

Lookup NU author(s): Dr Bing Ji, Dr Li Chen, Dr Wenping Cao, Min Zhang, Professor Volker Pickert


Full text for this publication is not currently held within this repository. Alternative links are provided below where available.


This paper presents methods for determining power loss profiles of Si-IGBT-based H-bridge inverters in motor drives. A comparison of inverter losses with commonly used PWM schemesincluding Bipolar and Unipolar PWMs is presented. Power losses were decomposed into switching and conduction losses to investigate their influence on the junction temperature of the IGBT. Junction temperature has been determined by an electro-thermal model and the dynamic power loss is determined based on the time-domain voltage, current and junction temperature using pre-calibrated look-up table.

Publication metadata

Author(s): Ji B, Chen L, Cao W, Zhang M, Pickert V

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: 7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

Year of Conference: 2014

Pages: 1-5

Acceptance date: 08/04/2014

ISSN: 9781849198158

Publisher: IET


DOI: 10.1049/cp.2014.0289