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Lookup NU author(s): Lucy Martin, Dr Hua Khee Chan, Professor Jon Goss, Professor Nick Wright, Dr Alton Horsfall
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Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.
Author(s): Martin LC, Chan HK, Clark D, Ramsay EP, Murphy AE, Smith DA, Thompson RF, Young RAR, Goss JP, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials 2013
Year of Conference: 2014
Pages: 428-431
Online publication date: 01/02/2014
ISSN: 1662-9752
Publisher: Trans Tech Publications Inc.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.428
DOI: 10.4028/www.scientific.net/MSF.778-780.428
Series Title: Materials Science Forum
