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Lookup NU author(s): Sandip Roy, Dr Chris O'MalleyORCiD, Professor Nick Wright, Dr Alton Horsfall
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High temperature gas sensors for the detection of harmful gases under extreme conditions have been demonstrated. Here, we show the detection and selective response of two SiC based MIS sensor structures with HfO2 and TiO2 high kappa dielectric layers to two different hydrogen containing gases. The structures utilise a Pt catalytic gate contact and a high-kappa dielectric that was grown on a thin SiO2 layer, which was thermally grown on the Si face of epitaxial 4H SiC. The chemical characteristics of MIS capacitors have been studied in N-2, O-2, H-2 and CH4 ambients at 573K. The data show a positive flatband voltage shift (Delta V-fb) for oxygen and methane with respect to the nitrogen baseline, whilst hydrogen shows a negative shift. The response for the TiO2 based sensor is significantly larger than that of the HfO2 based device for hydrogen, enabling discrimination of gases within a mixture.
Author(s): Roy SK, Vassilevski KV, O'Malley CJ, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials 2013
Year of Conference: 2014
Pages: 1058-1062
Online publication date: 01/02/2014
ISSN: 1662-9752
Publisher: Trans Tech Publications Inc.
URL: http://dx.doi.org/10.4028/www.scientific.net/MSF.778-780.1058
DOI: 10.4028/www.scientific.net/MSF.778-780.1058
Series Title: Materials Science Forum
