Toggle Main Menu Toggle Search

Open Access padlockePrints

Recent Advance in High Manufacturing Readiness Level and High Temperature CMOS Mixed-Signal Integrated Circuits on Silicon Carbide

Lookup NU author(s): Idzdihar Idris, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall



This is the authors' accepted manuscript of an article that has been published in its final definitive form by Institute of Physics Publishing Ltd, 2017.

For re-use rights please refer to the publisher's terms and conditions.


A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300°C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2,000 hours at 300°C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1,000 hours at 300°C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realize sensor interface circuits capable of operating above 300°C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.

Publication metadata

Author(s): Weng MH, Clark DT, Wright SN, Gordon DL, Duncan MA, Kirkham SJ, Idris MI, Chan HK, Young RAR, Ramsay EP, Wright NG, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Semiconductor Science and Technology

Year: 2017

Volume: 32

Issue: 5

Print publication date: 01/05/2017

Online publication date: 21/02/2017

Acceptance date: 21/02/2017

Date deposited: 10/03/2017

ISSN (print): 0268-1242

ISSN (electronic): 1361-6641

Publisher: Institute of Physics Publishing Ltd


DOI: 10.1088/1361-6641/aa61de


Altmetrics provided by Altmetric