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Lookup NU author(s): Idzdihar Idris, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall
This is the authors' accepted manuscript of an article that has been published in its final definitive form by Institute of Physics Publishing Ltd, 2017.
For re-use rights please refer to the publisher's terms and conditions.
A high manufacturing readiness level silicon carbide (SiC) CMOS technology is presented. The unique process flow enables the monolithic integration of pMOS and nMOS transistors with passive circuit elements capable of operation at temperatures of 300°C and beyond. Critical to this functionality is the behaviour of the gate dielectric and data for high temperature capacitance-voltage measurements are reported for SiO2/4H-SiC (n and p type) MOS structures. In addition, a summary of the long term reliability for a range of structures including contact chains to both n-type and p-type SiC, as well as simple logic circuits is presented, showing function after 2,000 hours at 300°C. Circuit data is also presented for the performance of digital logic devices, a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. A high temperature micro-oven system has been utilised to enable the high temperature testing and stressing of units assembled in ceramic dual in line packages, including a high temperature small form-factor SiC based bridge leg power module prototype, operated for over 1,000 hours at 300°C. The data presented show that SiC CMOS is a key enabling technology in high temperature integrated circuit design. In particular it provides the ability to realize sensor interface circuits capable of operating above 300°C, accommodate shifts in key parameters enabling deployment in applications including automotive, aerospace and deep well drilling.
Author(s): Weng MH, Clark DT, Wright SN, Gordon DL, Duncan MA, Kirkham SJ, Idris MI, Chan HK, Young RAR, Ramsay EP, Wright NG, Horsfall AB
Publication type: Article
Publication status: Published
Journal: Semiconductor Science and Technology
Year: 2017
Volume: 32
Issue: 5
Print publication date: 01/05/2017
Online publication date: 21/02/2017
Acceptance date: 21/02/2017
Date deposited: 10/03/2017
ISSN (print): 0268-1242
ISSN (electronic): 1361-6641
Publisher: Institute of Physics Publishing Ltd
URL: https://doi.org/10.1088/1361-6641/aa61de
DOI: 10.1088/1361-6641/aa61de
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