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Investigation of high performance Edge Lifted Capacitors reliability for GaAs and GaN MMIC technology

Lookup NU author(s): Dr Ming-Hung Weng

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Abstract

© 2014 Elsevier Ltd. All right reserved.This paper reports extensive investigations of Edge Lifted Capacitors (ELC) and standard metal-insulator-metal (MIM) capacitors with different refractive index and thickness of Silicon Nitride (Si3N4) dielectric films. The wafer-level electrical measurements reveal size dependence of capacitances and breakdown voltages. Physical characterization was performed using Fourier transform infrared spectroscopy (FTIR) to understand intrinsic properties of the studied films and failure-related cross sections were used to predict possible leakage mechanisms. Reliability testing of Human Body Model (HBM) and Machine Model (MM) electrostatic discharge (ESD), time-dependent dielectric breakdown (TDDB), and biased high temperature accelerated stress testing (bHAST) were performed and will be reviewed for GaAs and GaN monolithic microwave integrated circuit (MMIC) applications.

Publication metadata

Author(s): Weng M-H, Chen C-H, Lin C-K, Huang S-H, Du J-H, Peng S-W, Wohlmuth W, Chou FY-S, Hua C-H

Publication type: Article

Publication status: Published

Journal: Microelectronics Reliability

Year: 2014

Volume: 54

Issue: 12

Pages: 2697-2703

Print publication date: 01/12/2014

Online publication date: 20/11/2014

Acceptance date: 19/09/2014

ISSN (print): 0026-2714

ISSN (electronic): 1872-941X

Publisher: Pergamon Press

URL: https://doi.org/10.1016/j.microrel.2014.09.023

DOI: 10.1016/j.microrel.2014.09.023

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