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Lookup NU author(s): Dr Alton Horsfall
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Copyright © 2014 Materials Research Society. We present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range. Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature micro-oven system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.
Author(s): Clark DT, Thompson RF, Murphy AE, Smith DA, Ramsay EP, Young RAR, Ryan CT, Wright S, Horsfall AB
Publication type: Article
Publication status: Published
Journal: Materials Research Society Symposium Proceedings
Online publication date: 17/06/2014
Acceptance date: 01/01/1900
ISSN (print): 0272-9172
Publisher: Materials Research Society
Notes: Symposium DD – Silicon Carbide‒Materials, Processing and Devices
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