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CMOS circuits on silicon carbide for high temperature operation

Lookup NU author(s): Dr Alton Horsfall


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Copyright © 2014 Materials Research Society. We present the characteristics of a high temperature CMOS integrated circuit process based on 4H silicon carbide designed to operate at temperatures beyond 300°C. N-channel and P-channel transistor characteristics at room and elevated temperatures are presented. Both channel types show the expected low values of field effect mobility well known in SiC MOSFETS. However the performance achieved is easily capable of exploitation in CMOS digital logic circuits and certain analogue circuits, over a wide temperature range. Data is also presented for the performance of digital logic demonstrator circuits, in particular a 4 to 1 analogue multiplexer and a configurable timer operating over a wide temperature range. Devices are packaged in high temperature ceramic dual in line (DIL) packages, which are capable of greater than 300°C operation. A high temperature micro-oven system has been designed and built to enable testing and stressing of units assembled in these package types. This system heats a group of devices together to temperatures of up to 300°C while keeping the electrical connections at much lower temperatures. In addition, long term reliability data for some structures such as contact chains to n-type and p-type SiC and simple logic circuits is summarized.

Publication metadata

Author(s): Clark DT, Thompson RF, Murphy AE, Smith DA, Ramsay EP, Young RAR, Ryan CT, Wright S, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Materials Research Society Symposium Proceedings

Year: 2014

Volume: 1693

Online publication date: 17/06/2014

Acceptance date: 01/01/1900

ISSN (print): 0272-9172

Publisher: Materials Research Society

DOI: 10.1557/opl.2014.599

Notes: Symposium DD – Silicon Carbide‒Materials, Processing and Devices


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