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Silicon nitride encapsulation to preserve ohmic contacts characteristics in high temperature, oxygen rich environments

Lookup NU author(s): Sandip Roy, Professor Nick Wright, Dr Alton Horsfall


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© (2015) Trans Tech Publications, Switzerland. Ohmic contacts with low contact resistance, smooth surface morphology, and a welldefined edge profile are essential to ensure optimal device performance. Ohmic contacts often require annealing under vacuum at over 1000 °C, whilst high-κ dielectrics are usually annealed in O2 rich ambient at temperatures of 800 °C or less, affecting the specific contact resistivity (ρC) and RMS surface roughness. Therefore, protection of the Ohmic contacts during the annealing of a high-κ dielectric layer is a key enabling step in the realisation of high performance MOSFET structures. In order to prevent damage during the high-κ formation, a passivation layer capable of protecting the contacts during annealing is required. In this work we have investigated the suitability of PECVD silicon nitride as a passivation layer to protect Ohmic contacts during high temperature, oxygen rich annealing.

Publication metadata

Author(s): Roy SK, Vassilevski K, Wright NG, Horsfall AB

Editor(s): Chaussende D; Ferro G

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: European Conference on Silicon Carbide & Related Materials (ECSCRM 2014)

Year of Conference: 2015

Pages: 420-423

Online publication date: 01/06/2015

Acceptance date: 01/01/1900

Publisher: Trans Tech Publications Ltd


DOI: 10.4028/

Library holdings: Search Newcastle University Library for this item

Series Title: Materials Science Forum

ISBN: 9783038354789