4H-SiC VJFETs with self-aligned contacts

Zekentes, K; Stavrinidis, A; Konstantinidis, G; Kayambaki, M; Vamvoukakis, K; Vassakis, E; Vassilevski, K; Horsfall, AB; Wright, NG; Brosselard, P; Niu, SQ; Lazar, M; Planson, D; Tournier, D; Camara, N; Bucher, M

doi:10.4028/www.scientific.net/MSF.821-823.793

4H-SiC VJFETs with self-aligned contacts

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Abstract

© (2015) Trans Tech Publications, Switzerland. Trenched-implanted-gate 4H–SiC vertical-channel JFET (TI-VJFET) have been fabricated with self-aligned nickel silicide source and gate contacts using a process sequence that greatly reduces process complexity as it includes only four lithography steps. The effect of the channel geometry on the electrical characteristics has been studied by varying its length (0.3 and 1.2μm) and its width (1.5-5μm). The transistors exhibited high current handling capabilities (Direct Current density 330A/cm2). The output current reduces with the increase of the measurements temperature due to the decrease of the electron mobility value. The voltage breakdown exhibits a triode shape, which is typical for a static-induction transistor operation.

Publication metadata

Author(s): Zekentes K, Stavrinidis A, Konstantinidis G, Kayambaki M, Vamvoukakis K, Vassakis E, Vassilevski K, Horsfall AB, Wright NG, Brosselard P, Niu SQ, Lazar M, Planson D, Tournier D, Camara N, Bucher M

Publication type: Conference Proceedings (inc. Abstract)

Publication status: Published

Conference Name: Silicon Carbide and Related Materials 2014

Year of Conference: 2015

Pages: 793-796

Online publication date: 01/06/2015

Acceptance date: 01/01/1900

ISSN: 1662-9752

Publisher: Trans Tech Publications Ltd

URL: http://doi.org/10.4028/www.scientific.net/MSF.821-823.793

DOI: 10.4028/www.scientific.net/MSF.821-823.793

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