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Lookup NU author(s): Dr Hua Khee Chan,
Professor Nick Wright,
Dr Alton Horsfall
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© 2016 IEEE. The high temperature capability (up to 600°C) and excellent radiation hardness of silicon carbide (SiC) enables the possibility of constructing functional electronics for deployment in extreme environment , where the conditions are significantly beyond the capability of conventional semiconductors. Recent advancement in SiC growth techniques have led to the commercial availability of 6″ wafers, and this has enabled the development of high performance SiC electronics with increasing affordability. Hence, it is possible to demonstrate smart sensor nodes that can be used to fully characterize a wide range of locations, including those found in aerospace, deep space and deep well drilling, that are not possible with existing technology.
Author(s): Chan HK, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Proceedings of 2016 IEEE Sensors
Year of Conference: 2017
Online publication date: 09/01/2017
Acceptance date: 02/04/2016
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