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Lookup NU author(s): Dr Stevin PramanaORCiD
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Electrical characterizations of single Zn2 Sn O4 (ZTO) nanowire devices are presented. These include resistivity, mobility, and photosensing measurements. The resistivity and the mobility of the Zn 2 Sn O4 nanowire were measured to be 5.6 cm and 0.2 cm2/Vs, respectively. These values were found to be strongly dependent on the amount of electron-donating defects and less dependent on the thickness of the nanowires. An increase in the resistivity when changing the ambient atmosphere is observed. This change is caused by defect states lying in the bandgap, as shown by photoluminescence. The results imply the potential of ZTO nanowires as phototransistors and other photosensitive devices. © 2010 The Electrochemical Society.
Author(s): Karthik KRG, Andreasson BP, Sun C, Pramana SS, Varghese B, Sow CH, Mathews N, Wong LH, Mhaisalkar SG
Publication type: Article
Publication status: Published
Journal: Electrochemical and Solid-State Letters
Online publication date: 03/11/2010
ISSN (print): 1099-0062
Publisher: The Electrochemical Society
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