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Lookup NU author(s): Dr Stevin PramanaORCiD
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Electroluminescence characteristics of a heterojunction light-emitting diode, which was fabricated by depositing a layer of randomly assembled n-SnO2 nanowires on p-GaN:Mg/sapphire substrate via vapor transport method, were investigated at room temperature. Peak wavelength emission at around 388 nm was observed for the diode under forward bias. This is mainly related to the radiative recombination of weakly bounded excitons at the shallow-trapped states of SnO2 nanowires, Under reverse bias, near bandedge emission from the p-GaN:Mg/sapphire leads to the observation of emission peak at around 370 nm. © 2010 American Chemical Society.
Author(s): Yang HY, Yu SF, Liang HK, Lau SP, Pramana SS, Ferraris C, Cheng CW, Fan HJ
Publication type: Article
Publication status: Published
Journal: ACS Applied Materials and Interfaces
Print publication date: 28/04/2010
Online publication date: 15/03/2010
ISSN (print): 1944-8244
ISSN (electronic): 1944-8252
Publisher: American Chemical Society
PubMed id: 20423138
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