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Lookup NU author(s): Idzdihar Idris, Dr Ming-Hung Weng, Dr Hua Khee Chan, Professor Nick Wright, Dr Alton Horsfall
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© 2017 Trans Tech Publications, Switzerland. Operation of SiC MOSFETs beyond 300°C opens up opportunities for a wide range of CMOS based digital and analogue applications. However the majority of the literature focuses only on the optimization of a single type of MOS device (either PMOS or more commonly NMOS) and there is a lack of a comprehensive study describing the challenge of optimizing CMOS devices. This study reports on the impact of gate oxide performance in channel implanted SiC on the electrical stability for both NMOS and PMOS capacitors and transistors. Parameters including interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) and effective charge (NEFF) have been acquired from C-V characteristics to assess the effectiveness of the fabrication process in realising high quality gate dielectrics. The performance of SiC based CMOS transistors were analyzed by correlating the characteristics of the MOS interface properties, the MOSFET 1/f noise performance and transistor on-state stability at 300°C. The observed instability of PMOS devices is more significant than in equivalent NMOS devices. The results from MOS capacitors comprising interface state density (Dit), flatband voltage (VFB), threshold voltage (VTH) for both N and P MOS are in agreement with the expected characteristics of the respective transistors.
Author(s): Idris MI, Weng MH, Chan H-K, Murphy AE, Smith DA, Young RAR, Ramsay EP, Clark DT, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016)
Year of Conference: 2017
Pages: 513-516
Online publication date: 01/05/2017
Acceptance date: 02/04/2016
ISSN: 1662-9752
Publisher: Trans Tech Publications Ltd
URL: https://doi.org/10.4028/www.scientific.net/MSF.897.513
DOI: 10.4028/www.scientific.net/MSF.897.513
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum
ISBN: 9783035710434