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Lookup NU author(s): Professor Nick Wright,
Dr Amit Tiwari
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© VDE VERLAG GMBH · Berlin · Offenbach. Significant drivers for Silicon Carbide based semiconductor devices focus on the areas of increased power density, voltage and thermal rating. Combination of high breakdown field, good thermal conductivity and high power densities of SiC opens opportunities for innovative device concepts. This work presents the experimental investigations undertaken to characterise the performance of 3.3 kV SiC-based Solid State Damping Resistor installed within a High Voltage Direct Current Line Commutated Converter Valve as a replacement for the passive damping resistor in a valve auxiliary circuit.
Author(s): Vershinin K, Efika I, Trainer D, Davidson C, Wright N, Tiwari A
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Year of Conference: 2016
Online publication date: 27/06/2016
Acceptance date: 02/04/2016
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