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Lookup NU author(s): Asad Fayyaz,
Dr Jesus Urresti IbanezORCiD,
Professor Nick Wright
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© 2017 IEEJ. This paper investigates the effect of negative gate bias voltage (Vgs) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device's ability to withstand energy dissipation during avalanche regime is a connoting figure of merit for all applications requiring load dumping and/or benefiting from snubber-less converter design. The superior material properties of SiC material means that SiC MOSFETs even at 1200V exhibit significant intrinsic avalanche robustness.
Author(s): Fayyaz A, Castellazzi A, Romano G, Riccio M, Irace A, Urresti J, Wright N
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: Proceedings of the 29th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2017
Year of Conference: 2017
Online publication date: 24/07/2017
Acceptance date: 02/04/2016
Publisher: Institute of Electrical and Electronics Engineers Inc.
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