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A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Lookup NU author(s): Asad Fayyaz, Dr Jesus Urresti IbanezORCiD, Professor Nick Wright

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This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).

Abstract

© 2017 by the authors. Licensee MDPI, Basel, Switzerland. This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown.

Publication metadata

Author(s): Fayyaz A, Romano G, Urresti J, Riccio M, Castellazzi A, Irace A, Wright N

Publication type: Article

Publication status: Published

Journal: Energies

Year: 2017

Volume: 10

Issue: 4

Pages: 452

Online publication date: 01/04/2017

Acceptance date: 21/03/2017

Date deposited: 11/10/2017

ISSN (electronic): 1996-1073

Publisher: MDPI AG

URL: https://doi.org/10.3390/en10040452

DOI: 10.3390/en10040452

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