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Influence of Fermi Level Alignment with Tin Oxide on the Hysteresis of Perovskite Solar Cells

Lookup NU author(s): Dr Pablo Docampo



This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Chemical Society, 2018.

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© 2018 American Chemical Society. We tune the Fermi level alignment between the SnOx electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL-perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge collection efficiency adversely, which increases the hysteresis of PSCs.

Publication metadata

Author(s): Ayguler MF, Hufnagel AG, Rieder P, Wussler M, Jaegermann W, Bein T, Dyakonov V, Petrus ML, Baumann A, Docampo P

Publication type: Article

Publication status: Published

Journal: ACS Applied Materials and Interfaces

Year: 2018

Volume: 10

Issue: 14

Pages: 11414-11419

Print publication date: 11/04/2018

Online publication date: 20/03/2018

Acceptance date: 20/03/2018

Date deposited: 08/06/2018

ISSN (print): 1944-8244

ISSN (electronic): 1944-8252

Publisher: American Chemical Society


DOI: 10.1021/acsami.8b00990


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Funder referenceFunder name
Federal Ministry of Education and Research (BMBF)