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Lookup NU author(s): Dr Pablo Docampo
This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Chemical Society, 2018.
For re-use rights please refer to the publisher's terms and conditions.
© 2018 American Chemical Society. We tune the Fermi level alignment between the SnOx electron transport layer (ETL) and Cs0.05(FA0.83MA0.17)0.95Pb(I0.83Br0.17)3 and highlight that this parameter is interlinked with current-voltage hysteresis in perovskite solar cells (PSCs). Furthermore, thermally stimulated current measurements reveal that the depth of trap states in the ETL or at the ETL-perovskite interface correlates with Fermi level positions, ultimately linking it to the energy difference between the Fermi level and conduction band minimum. In the presence of deep trap states, charge accumulation and recombination at the interface are promoted, affecting the charge collection efficiency adversely, which increases the hysteresis of PSCs.
Author(s): Ayguler MF, Hufnagel AG, Rieder P, Wussler M, Jaegermann W, Bein T, Dyakonov V, Petrus ML, Baumann A, Docampo P
Publication type: Article
Publication status: Published
Journal: ACS Applied Materials and Interfaces
Print publication date: 11/04/2018
Online publication date: 20/03/2018
Acceptance date: 20/03/2018
Date deposited: 08/06/2018
ISSN (print): 1944-8244
ISSN (electronic): 1944-8252
Publisher: American Chemical Society
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