Lookup NU author(s): Idzdihar Idris,
Professor Nick Wright,
Dr Alton Horsfall
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© 2018 Trans Tech Publications, Switzerland. 3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (Formula Presented) plane in the sidewall.
Author(s): Idris MI, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
Year of Conference: 2018
Online publication date: 01/06/2018
Acceptance date: 02/04/2016
Publisher: Trans Tech Publications Ltd
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum