Browse by author
Lookup NU author(s): Idzdihar Idris,
Professor Nick Wright,
Dr Alton Horsfall
Full text for this publication is not currently held within this repository. Alternative links are provided below where available.
© 2018 Trans Tech Publications, Switzerland. This paper reports on the effect of forming gas annealing on the C-V characteristics and stability of Al2O3/SiC MOS capacitors deposited by atomic layer deposition, (ALD). C-V and IV measurements were performed to assess the quality of the Al2O3 layer and the Al2O3/SiC interface. In comparison to as-deposited sample, the post oxide annealing (POA) in forming gas at high temperatures has improved the stability of C-V characteristic and the properties at the interface of Al2O3/SiC capacitors. However, the oxide capacitance and oxide breakdown electric field degrade with increased annealing temperature. The results provide indications to improve the performance of Al2O3/SiCcapacitors 4H-SiC devices by optimizing the annealing temperature.
Author(s): Idris MI, Wright NG, Horsfall AB
Publication type: Conference Proceedings (inc. Abstract)
Publication status: Published
Conference Name: International Conference on Silicon Carbide and Related Materials (ICSCRM 2017)
Year of Conference: 2018
Online publication date: 01/06/2018
Acceptance date: 02/04/2016
Publisher: Trans Tech Publications Ltd
Library holdings: Search Newcastle University Library for this item
Series Title: Materials Science Forum