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Pore Wall Thinning of Mesoporous 4H-SiC by Sacrificial Oxidation

Lookup NU author(s): Idzdihar Idris, Dr Ben Horrocks, Professor Noel HealyORCiD, Professor Jon Goss, Dr Alton Horsfall


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© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Pore wall thinning of mesoporous 4H-SiC by sacrificial oxidation is performed. The dimensions within the as-etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H-SiC derived nanostructures.

Publication metadata

Author(s): Rashid M, Idris MI, Horrocks BR, Healy N, Goss JP, Horsfall AB

Publication type: Article

Publication status: Published

Journal: Crystal Research and Technology

Year: 2018

Volume: 53

Issue: 9

Print publication date: 01/09/2018

Online publication date: 21/08/2018

Acceptance date: 02/04/2018

ISSN (print): 0232-1300

ISSN (electronic): 1521-4079

Publisher: Wiley-VCH Verlag


DOI: 10.1002/crat.201800120


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