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Lookup NU author(s): Idzdihar Idris, Dr Ben Horrocks, Professor Noel HealyORCiD, Professor Jon Goss, Dr Alton Horsfall
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© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Pore wall thinning of mesoporous 4H-SiC by sacrificial oxidation is performed. The dimensions within the as-etched porous SiC are reduced during dry oxidation at 1100 °C by consuming SiC and removing the grown SiO2 in the subsequent hydrofluoric acid (HF) dip step. The process reduces the average pore wall thickness from 27 nm to approximately 16 nm and reduces the thickness standard deviation from ±5 to ±1.4 nm for the investigated 9 h oxidation interval. The new pore wall thinning method will enable controlled nanoscale size reduction capability for mesoporous 4H-SiC derived nanostructures.
Author(s): Rashid M, Idris MI, Horrocks BR, Healy N, Goss JP, Horsfall AB
Publication type: Article
Publication status: Published
Journal: Crystal Research and Technology
Year: 2018
Volume: 53
Issue: 9
Print publication date: 01/09/2018
Online publication date: 21/08/2018
Acceptance date: 02/04/2018
ISSN (print): 0232-1300
ISSN (electronic): 1521-4079
Publisher: Wiley-VCH Verlag
URL: https://doi.org/10.1002/crat.201800120
DOI: 10.1002/crat.201800120
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