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Device Modelling of MgO-Barrier Tunnelling Magnetoresistors for Hybrid Spintronic-CMOS

Lookup NU author(s): Professor Kianoush Nazarpour



This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.

For re-use rights please refer to the publisher's terms and conditions.


Crown Spintronic sensors, that are based on the tunnellingmagnetoresistive (TMR) effect, have been utilized in detecting low magnetic fields. However, still no computer-based model of these devices is available to integrated circuit designer to implement them in a hybrid spintronic-CMOS system. We developed a finite element method (FEM)-based model of a MgO-barrier TMR device in COMSOL Multiphysics®. The parameters of this model were extracted from the state-of-the-art fabrication and experimental data. Results were compared with respect to the model geometry and the used material. The proposed TMR sensor model offers a linear response with a high TMR ratio of 233% at 10 mV power supply. The model was exported to Cadence© Spectre to create a compact model using Verilog-A language. The developed sensor model was simulated with its analog front-end in same environment. This model provided a reliable benchmark for modelling of the future hybrid spintronic-CMOS developments.

Publication metadata

Author(s): Zuo S, Nazarpour K, Heidari H

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2018

Volume: 39

Issue: 11

Pages: 1784-1787

Print publication date: 01/11/2018

Online publication date: 17/09/2018

Acceptance date: 09/09/2018

Date deposited: 30/10/2018

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE


DOI: 10.1109/LED.2018.2870731


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