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Device Modelling of MgO-Barrier Tunnelling Magnetoresistors for Hybrid Spintronic-CMOS

Lookup NU author(s): Professor Kianoush Nazarpour

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This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.

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Abstract

Crown Spintronic sensors, that are based on the tunnellingmagnetoresistive (TMR) effect, have been utilized in detecting low magnetic fields. However, still no computer-based model of these devices is available to integrated circuit designer to implement them in a hybrid spintronic-CMOS system. We developed a finite element method (FEM)-based model of a MgO-barrier TMR device in COMSOL Multiphysics®. The parameters of this model were extracted from the state-of-the-art fabrication and experimental data. Results were compared with respect to the model geometry and the used material. The proposed TMR sensor model offers a linear response with a high TMR ratio of 233% at 10 mV power supply. The model was exported to Cadence© Spectre to create a compact model using Verilog-A language. The developed sensor model was simulated with its analog front-end in same environment. This model provided a reliable benchmark for modelling of the future hybrid spintronic-CMOS developments.


Publication metadata

Author(s): Zuo S, Nazarpour K, Heidari H

Publication type: Article

Publication status: Published

Journal: IEEE Electron Device Letters

Year: 2018

Volume: 39

Issue: 11

Pages: 1784-1787

Print publication date: 01/11/2018

Online publication date: 17/09/2018

Acceptance date: 09/09/2018

Date deposited: 30/10/2018

ISSN (print): 0741-3106

ISSN (electronic): 1558-0563

Publisher: IEEE

URL: https://doi.org/10.1109/LED.2018.2870731

DOI: 10.1109/LED.2018.2870731


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Funding

Funder referenceFunder name
EP/R004242/1EPSRC
EP/N023080/1EPSRC
EPSRC
MAGLAB
RSG\R1\180269

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