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Gate-emitter Pre-threshold Voltage as a Health Sensitive Parameter for IGBT Chip Failure Monitoring in High Voltage Multichip IGBT Power Modules

Lookup NU author(s): Professor Volker Pickert



This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2018.

For re-use rights please refer to the publisher's terms and conditions.


This paper proposes a novel health sensitive parameter, called the gate-emitter prethreshold voltage VGE(pre-th), for detecting IGBT chip failures in multichip IGBT power modules. The proposed method has been applied in an IGBT gate driver and measures the VGE at a fixed time instant of the VGE transient before the threshold voltage occurs. To validate the proposed method, theoretical analysis and practical results for a 16-chip IGBT power module are presented in the paper. The results show a 500 mV average shift in the measured VGE(pre-th ) for each IGBT chip failure.

Publication metadata

Author(s): Mandeya R, Chen C, Pickert V, Naayagi RT, Ji B

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Power Electronics

Year: 2018

Volume: 34

Issue: 9

Pages: 9158-9169

Print publication date: 01/09/2019

Online publication date: 30/11/2018

Acceptance date: 19/11/2018

Date deposited: 22/11/2018

ISSN (print): 0885-8993

ISSN (electronic): 1941-0107

Publisher: IEEE


DOI: 10.1109/TPEL.2018.2884276


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