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Controlling defect and dopant concentrations in graphene by remote plasma treatments

Lookup NU author(s): Dr Toby HallamORCiD

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This is the authors' accepted manuscript of an article that has been published in its final definitive form by Wiley - VCH Verlag GmbH & Co. KGaA, 2017.

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Abstract

This report details the controllable doping of graphene through post‐growth plasma treatments. Defects are controllably introduced into the lattice using argon plasma, following this sample are exposed to ammonia/hydrogen plasma. During this nitrogen atoms get incorporated causing partial restoration of the graphene lattice. The damage levels are characterised by Raman and X‐ray photoelectron spectroscopies. The incorporation of nitrogen into the graphene lattice provides significant n‐doping. This is confirmed by the fabrication of graphene field‐effect transistors which show clear n‐type behaviour and mobilities not significantly less than those of pristine graphene. Thus this work demonstrates the viability of plasma treatments to reliably dope graphene.

Publication metadata

Author(s): McManus JB, Hennessy A, Cullen CP, Hallam T, McEvoy N, Duesberg GS

Publication type: Article

Publication status: Published

Journal: physica status solidi (b)

Year: 2017

Volume: 254

Issue: 11

Print publication date: 30/11/2017

Online publication date: 25/09/2017

Acceptance date: 25/09/2017

Date deposited: 10/02/2020

ISSN (print): 0370-1972

ISSN (electronic): 1521-3951

Publisher: Wiley - VCH Verlag GmbH & Co. KGaA

URL: https://doi.org/10.1002/pssb.201700214

DOI: 10.1002/pssb.201700214

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