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Localization and Detection of Bond Wire Faults in Multi-chip IGBT Power Modules

Lookup NU author(s): Cuili Chen, Professor Volker Pickert, Dr Maher Al-Greer



This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2020.

For re-use rights please refer to the publisher's terms and conditions.


Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift–off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.

Publication metadata

Author(s): Chen C, Pickert V, Al-Greer M, Jia C, NG C

Publication type: Article

Publication status: Published

Journal: IEEE Transactions on Power Electronics

Year: 2020

Volume: 35

Issue: 8

Pages: 7804-7815

Print publication date: 01/08/2020

Online publication date: 08/01/2020

Acceptance date: 26/12/2019

Date deposited: 05/01/2020

ISSN (print): 0885-8993

ISSN (electronic): 1941-0107

Publisher: IEEE


DOI: 10.1109/TPEL.2020.2965019


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