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Lookup NU author(s): Cuili Chen,
Professor Volker Pickert,
Dr Maher Al-Greer
This is the authors' accepted manuscript of an article that has been published in its final definitive form by IEEE, 2020.
For re-use rights please refer to the publisher's terms and conditions.
Multi-chip Insulated Gate Bipolar Transistor (mIGBT) power modules (PMs) degrade over power cycling. Bond wire lift–off is one of the major failure modes. This paper presents a technique to diagnose bond wire lift-off by analyzing the on-state voltages across collector and emitter terminals and the voltages across collector and Kelvin emitter terminals. The proposed method can indicate the first lift-off out of 37 bond wires in a mIGBT. The main novelty of the proposed technique is that it can locate the chip that has bond wire lift-off(s). The paper describes the proposed technique in detail and shows results and discussions based on practical tests which are carried out on two mIGBT PMs with different packages.
Author(s): Chen C, Pickert V, Al-Greer M, Jia C, NG C
Publication type: Article
Publication status: Published
Journal: IEEE Transactions on Power Electronics
Print publication date: 01/08/2020
Online publication date: 08/01/2020
Acceptance date: 26/12/2019
Date deposited: 05/01/2020
ISSN (print): 0885-8993
ISSN (electronic): 1941-0107
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