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Nitrogen in Diamond

Lookup NU author(s): Professor Jon Goss, Dr Chloe Peaker



This is the authors' accepted manuscript of an article that has been published in its final definitive form by American Chemical Society, 2020.

For re-use rights please refer to the publisher's terms and conditions.


© 2020 American Chemical Society.Nitrogen is ubiquitous in both natural and laboratory-grown diamond, but the number and nature of the nitrogen-containing defects can have a profound effect on the diamond material and its properties. An ever-growing fraction of the supply of diamond appearing on the world market is now lab-grown. Here, we survey recent progress in two complementary diamond synthesis methods - high pressure high temperature (HPHT) growth and chemical vapor deposition (CVD), how each is allowing ever more precise control of nitrogen incorporation in the resulting diamond, and how the diamond produced by either method can be further processed (e.g., by implantation or annealing) to achieve a particular outcome or property. The burgeoning availability of diamond samples grown under well-defined conditions has also enabled huge advances in the characterization and understanding of nitrogen-containing defects in diamond - alone and in association with vacancies, hydrogen, and transition metal atoms. Among these, the negatively charged nitrogen-vacancy (NV-) defect in diamond is attracting particular current interest in account of the many new and exciting opportunities it offers for, for example, quantum technologies, nanoscale magnetometry, and biosensing.

Publication metadata

Author(s): Ashfold MNR, Goss JP, Green BL, May PW, Newton ME, Peaker CV

Publication type: Article

Publication status: Published

Journal: Chemical Reviews

Year: 2020

Volume: 120

Issue: 12

Pages: 5745–5794

Print publication date: 24/06/2020

Online publication date: 12/02/2020

Acceptance date: 21/08/2019

Date deposited: 13/03/2020

ISSN (print): 0009-2665

ISSN (electronic): 1520-6890

Publisher: American Chemical Society


DOI: 10.1021/acs.chemrev.9b00518


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