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A general approach for hysteresis-free, operationally stable metal halide perovskite field-effect transistors

Lookup NU author(s): Dr Pablo Docampo

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This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0).

Abstract

Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.

Publication metadata

Author(s): Senanayak SP, Abdi-Jalebi M, Kamboj VS, Carey R, Shivanna R, Tian T, Schweicher G, Wang J, Giesbrecht N, Di Nuzzo D, Beere HE, Docampo P, Ritchie DA, Fairen-Jimenez D, Friend RH, Sirringhaus H

Publication type: Article

Publication status: Published

Journal: Science Advances

Year: 2020

Volume: 6

Issue: 15

Print publication date: 08/04/2020

Online publication date: 10/04/2020

Acceptance date: 13/01/2020

Date deposited: 29/04/2020

ISSN (electronic): 2375-2548

Publisher: American Association for the Advancement of Science

URL: https://doi.org/10.1126/sciadv.aaz4948

DOI: 10.1126/sciadv.aaz4948

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Funding

Funder referenceFunder name
D.F.-J. thanks the Royal Society for funding through a University Research Fellowship.
EPSRC - EP/P021859/1
EPSRC - EP/S031103/1
G.S. acknowledges postdoctoral fellowship support from The Leverhulme Trust (Early Career Fellowship supported by the Isaac Newton Trust).
EPSRC - EP/P03148X/1
EPSRC - EP/P032591/1
EPSRC through program grants EP/M005143/1
ERC Synergy Grand SC2 (no. 610115).
M.A.- J. thanks Cambridge Materials Limited and Wolfson College, University of Cambridge for funding and technical support.
S.P.S. acknowledges funding through Royal Society Newton Alumni Fellowship
S.P.S. and R.S. acknowledges funding from the Royal Society London for the Newton Fellowship

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