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Lookup NU author(s): Dr Pablo Docampo
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License (CC BY-NC 4.0).
Copyright © 2020 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC).Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. Here, we investigate the mechanism behind these instabilities and demonstrate an effective route to suppress them to realize high-performance perovskite FETs with low hysteresis, high threshold voltage stability (ΔVt < 2 V over 10 hours of continuous operation), and high mobility values >1 cm2/V·s at room temperature. We show that multiple cation incorporation using strain-relieving cations like Cs and cations such as Rb, which act as passivation/crystallization modifying agents, is an effective strategy for reducing vacancy concentration and ion migration in perovskite FETs. Furthermore, we demonstrate that treatment of perovskite films with positive azeotrope solvents that act as Lewis bases (acids) enables a further reduction in defect density and substantial improvement in performance and stability of n-type (p-type) perovskite devices.
Author(s): Senanayak SP, Abdi-Jalebi M, Kamboj VS, Carey R, Shivanna R, Tian T, Schweicher G, Wang J, Giesbrecht N, Di Nuzzo D, Beere HE, Docampo P, Ritchie DA, Fairen-Jimenez D, Friend RH, Sirringhaus H
Publication type: Article
Publication status: Published
Journal: Science Advances
Print publication date: 08/04/2020
Online publication date: 10/04/2020
Acceptance date: 13/01/2020
Date deposited: 29/04/2020
ISSN (electronic): 2375-2548
Publisher: American Association for the Advancement of Science
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