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Lookup NU author(s): Dr Aleksey KozikovORCiD
This work is licensed under a Creative Commons Attribution 4.0 International License (CC BY 4.0).
The intriguing physics of carrier-carrier interactions, which likewise affect the operation of light emitting devices, stimulate the research on semiconductor structures at high densities of excited carriers, a limit reachable at large pumping rates or in systems with long-lived electron-hole pairs. By electrically injecting carriers into WSe2/MoS2 type-II heterostructures which are indirect in real and k-space, we establish a large population of typical optically silent interlayer excitons. Here, we reveal their emission spectra and show that the emission energy is tunable by an applied electric field. When the population is further increased by suppressing the radiative recombination rate with the introduction of an hBN spacer between WSe2 and MoS2, Auger-type and exciton-exciton annihilation processes become important. These processes are traced by the observation of an up-converted emission demonstrating that excitons gaining energy in non-radiative Auger processes can be recovered and recombine radiatively.
Author(s): Binder J, Howarth J, Withers F, Molas MR, Taniguchi T, Watanabe K, Faugeras C, Wysmolek A, Danovich M, Fal'ko V, Geim A, Novoselov K, Potemski M, Kozikov A
Publication type: Article
Publication status: Published
Journal: Nature Communications
Online publication date: 27/05/2019
Acceptance date: 29/04/2019
Date deposited: 01/06/2020
ISSN (electronic): 2041-1723
Publisher: Nature Publishing Group
PubMed id: 31133651
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